tm april 2012 fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt @2012 fairchild semiconductor corporation fgb3040cs rev. c1 www.fairchildsemi.com 1 fgb3040cs ecospark tm 300mj, 400v, n-channel cu rrent sensing ig nition igbt general description the fgb3040cs is an lgnition igbt that offers outstand - ing scis capability along with a ratiometric emitter current sensing capability. this s ensing is based on a emitter active area ratio of 200:1. the output is provided through a fourth (sense) lead. this signal provides a current level that is proportional to the main collector to emitter current. the effective ratio as meas ured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage. applications ? smart automotive lgniti on coil driver circuits ? ecu based systems ? distributorless based systems ? coil on plug based systems features ? scis energy = 300mj at t j = 25 o c ? logic level gate drive package symbol device maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 2ma) 430 v bv ecs emitter to collector breakdown voltage (i c = 1ma) (reverse battery condition) 24 v e scis25 self clamping inductive switching energy (at starting t j = 25c) 300 mj e scis150 self clamping inductive switching energy (at starting t j = 150c) 170 mj i c25 continuous collector current, at v ge = 4.0v, t c = 25c 21 a i c110 continuous collector current, at v ge = 4.0v, t c = 110c 19 a v gem maximum continuous gate to emitter voltage 10 v p d power dissipation, at t c = 25c 150 w power dissipation derating, for t c > 25 o c1w/ o c t j operating junction temperature range -40 to 175 o c t stg storage junction temperature range -40 to 175 o c t l max. lead temp. for soldering (at 1.6mm from case for 10sec) 300 o c t pkg max. package temp. for soldering (package body for 10 sec) 260 o c esd electrostatic discharge voltage, hbm model (100pfd, 1500 ohms) 4 kv ? qualified to aec q101 ? rohs compliant
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t a = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package reel size tape width quantity 3040cs fgb3040cs to-263 6 lead 300mm 24mm 800 3040cs fgb3040cs to-263 6 lead tube n/a 50 symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i ce = 2ma, v ge = 0, r ge = 1k , see fig. 17 t j = -40 to 150 o c 370 410 430 v bv ces collector to emitter breakdown voltage i ce = 10ma, v ge = 0v r ge = 0, see fig. 17 t j = -40 to 150 o c 390 430 450 v bv ecs emitter to collector breakdown voltage i ce = -75ma, v ge = 0v, t c = 25c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i geo gate to emitter leakage current v ge = 10v - - 9 a i ces collector to emitter leakage current v ces = 250v, see fig. 13 t c = 25 o c--25 a t c = 150 o c--1 ma i ecs emitter to collector leakage current v ec = 24v, see fig. 13 t c = 25 o c --1 ma t c = 150 o c--40 r 1 series gate resistance - 100 - v ce(sat) collector to emitter saturation voltage i ce = 6a, v ge = 4v t c = 25 o c see fig. 5 -1.31.6v v ce(sat) collector to emitter saturation voltage i ce = 10a, v ge = 4.5v t c = 150 o c see fig. 6 - 1.6 1.85 v v ce(sat) collector to emitter saturation voltage i ce = 15a, v ge = 4.5v t c = 150 o c-1.82.35 v i ce(on) collector to emitter on state current v ce = 5v, v ge = 5v - 37 - a q g(on) gate charge i ce = 10a, v ce = 12v, v ge = 5v, see fig. 16 -15-nc v ge(th) gate to emitter threshold voltage i ce = 1ma, v ce = v ge see fig. 12 t c = 25 o c 1.3 1.6 2.2 v t c = 150 o c 0.75 1.1 1.8 v gep gate to emitter plateau voltage i ce = 10a, v ce = 1 2 v - 3 . 0 - v area emitter sense area ratio sense area/total area - 1/200 - - 5 emitter current sense ratio i ce = 8.0a, v ge = 5v, r sense = 5 - 230 - - 20 emitter current sense ratio i ce = 9.0a, v ge = 5v, r sense = 20 550 640 765 - t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 v ge = 5v, r g = 1k t j = 25c, see fig. 14 -0.64 s t rr current rise time-resistive - 1.5 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, l = 500 hy, v ge = 5v, r g = 1k t j = 25c, see fig. 14 -4.715 s t fl current fall time-inductive - 2.6 15 s scis self clamped inductive switching t j = 25c, l = 3.0mhy, i ce = 14.2a, r g = 1k , v ge = 5v, see fig. 3&4 - - 300 mj r jc thermal resistance junction to case all packages - - 1.0 o c/w
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 3 typical performance curves figure 1. emitter sense voltage vs. emitter sense resistance figure 2. emitter sense voltage vs. collector to emitter current figure 3. self clamped inductive switching current vs. time in clamp figure 4. self clamped inductive switching current vs. inductance figure 5. collector to emitte r on-state voltage vs. junction temperature figure 6. collector to emitte r on-state voltage vs. junction temperature 1 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i ce = 18a i ce = 15a i ce = 10a i ce = 8a i ce = 5a i ce = 3a i ce = 1a i ce = 0.5a v ge = 5v, t j = 25 o c r sense , emitter sense resistance (ohms) v sense , emitter sense voltage (v) 0 2 4 6 8 101214161820 0 100 200 300 400 v sense , emitter sense voltage (mv) i ce , collector to emitter current ( a ) v ge = 5v, r sense = 5 ohms, t j = 25 o c 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 35 scis curves valid for v clamp voltages of <430v t j = 150 o c t j = 25 o c t clp , time in clamp ( s ) i scis , inductive switching current (a) r g = 1k , v ge = 5v, v ce = 14v 0246810 0 5 10 15 20 25 30 35 scis curves valid for v clamp voltages of <430v t j = 150 o c t j = 25 o c l, inductance ( mhy ) i scis , inductive switching current (a) r g = 1k , v ge = 5v, v ce = 14v -75 -50 -25 0 25 50 75 100 125 150 175 1.12 1.16 1.20 1.24 1.28 1.32 1.36 i ce = 6a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c ) -75 -50 -25 0 25 50 75 100 125 150 175 1.2 1.3 1.4 1.5 1.6 1.7 1.8 i ce = 10a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c )
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 4 figure 7. collector to emitte r on-state voltage vs. collector current figure 8. collector to emitter on-state voltage vs. collector current figure 9. collector to emitte r on-state voltage vs. collector current figure 10. transfer characteristics figure 11. dc collector current vs. case temperature figure 12. threshold voltage vs. junction temperature typical performance curves 01234 0 10 20 30 40 t j = -40 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 01234 0 10 20 30 40 t j = 25 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 01234 0 10 20 30 40 t j = 175 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0123456 0 10 20 30 40 t j = -40 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v ce = 5v i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 25 50 75 100 125 150 175 0 5 10 15 20 25 i ce , dc collector current (a) t c , case temperature ( o c ) v ge = 4.0v -50 -25 0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce = v ge i ce = 1m a v th , threshold voltage (v) t j , junction temperature ( o c ) (continued)
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 5 figure 13. leakage current vs. junction temperature figure 14. switching time vs. junction temperature figure 15. capacitance vs. coll ector to emitter voltage figure 16. gate charge figure 17. break down voltage vs. series gate resistance typical performance curves -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 v ces = 250v v ces = 300v v ecs = 24v t j , junction temperature ( o c ) leakage current ( a ) 25 50 75 100 125 150 175 0 2 4 6 8 10 12 resistive t on inductive t off resistive t off switching time ( s ) t j , junction temperature ( o c ) i ce = 6.5a, v ge = 5v, r g = 1k 0 5 10 15 20 25 30 0 400 800 1200 1600 2000 f = 1mhz v ge = 0v c res c oes c ies v ds , drain to source voltage ( v ) capacitance (pf) 0 5 10 15 20 25 30 35 0 2 4 6 8 10 i ce = 10a, t j = 25 o c v ce = 6v v gs , gate to emitter voltage(v) q g , gate charge(nc) v ce = 12v 10 100 1000 395 400 405 410 415 t j = 25 o c t j = -40 o c t j = 175 o c i cer = 10ma r g , series gate resistance ( ) bv cer , breakdown voltage (v) 6000 (continued)
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 6 figure 18. igbt normalized transient thermal impedance, junction to case typical performance curves 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 7 test circuit and waveforms bv cer
fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt fgb3040cs rev. c1 www.fairchildsemi.com 8
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fgb3040cs rev. c1 www.fairchildsemi.com 9 fgb3040cs 300mj, 400v, n-channe l current sensin g ignition igbt
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